Boris Kiefer, Sean R. Shieh, Thomas. S. Duffy (Princeton University) and T. Sekine (National Institute for Materials Science)
facility: NSLS-X17C (DAC)
An area of active research in materials sciences is the synthesis and characterization of novel materials. Recently a new superhard form of silicon nitride compound (c-Si3N4) has been synthesized in high pressure/high temperature experiments. The excellent metastability of this material and its hardness make this material technologically interesting. Numerous experimental and theoretical studies have been undertaken to study the equation of state, the hardness and the electronic properties of c-Si3N4. However, the elastic properties of c-Si3N4 have only been predicted at ambient pressure and the mechanical properties of this phase remain largely unknown.
We performed radial x-ray diffraction experiments at pressures up to 70 GPa
to access the yield strength and elastic anisotropy of c-Si3N4 for the first
time at pressure. The sample consisted of a fine powder that was recovered from
shock wave experiments by one of us (T. Sekine). We compressed the sample in
a DAC without a pressure medium in order to overcome the yield strength of c-Si3N4.
Energy-dispersive X-ray diffraction patterns were collected at beamline X17C
at the NSLS for different orientations of the DAC axis with respect to the X-ray
scattering plane. Lattice strain theory provides the conceptual framework for
the analysis of our measurements and allows us to gain insights into the elastic
and plastic properties of c-Si3N4. However, the determination of the yield strength
from our measurements requires a partial knowledge of the elasticity of c-Si3N4.
Since this information is not available at elevated pressures, we augmented
our study with first-principle calculations of the full elastic constant tensor
at pressure. The hydrostatic equation of state as derived from our measurements
is in good agreement with previous measurements. Our results show a large and
weakly pressure dependent elastic anisotropy (A=2*C44/(C11-C12)) of 1.5(1),
a trend which is consistent with our first-principle calculations. We find that
the yield strength of c-Si3N4 increases rapidly from 9.1(1.5) to 18.7(3.1) GPa
between 20 and 45 GPa and increases at a much lower rate to 22 GPa at 70 GPa.
Thus c-Si3N4 shows one of the highest yield strength observed to date but is
still not as strong as diamond.